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STP24N60DM2 PDF预览

STP24N60DM2

更新时间: 2023-12-20 18:44:45
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
21页 1195K
描述
N沟道600 V、0.175 Ohm典型值、18 A MDmesh DM2功率MOSFET,TO-220封装

STP24N60DM2 数据手册

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STB24N60DM2, STP24N60DM2,  
STW24N60DM2  
N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus™ low Qg  
Power MOSFETs in D2PAK, TO-220 and TO-247 packages  
Datasheet  
production data  
Features  
TAB  
TAB  
VDS  
TJmax  
@
RDS(on)  
max  
2
1
Order codes  
ID  
3
3
D2PAK  
STB24N60DM2  
STP24N60DM2  
STW24N60DM2  
2
1
650 V  
0.20 Ω  
18 A  
TO-220  
Extremely low gate charge and input  
capacitance  
3
2
Lower RDS(on) x area vs previous generation  
Low gate input resistance  
100% avalanche tested  
1
TO-247  
Figure 1. Internal schematic diagram  
Zener-protected  
Extremely high dv/dt and avalanche  
D(2, TAB)  
capabilities  
Applications  
Switching applications  
G(1)  
Description  
These FDmesh II Plus™ low Qg Power MOSFETs  
with intrinsic fast-recovery body diode are  
produced using a new generation of MDmesh™  
technology: MDmesh II Plus™ low Qg. These  
revolutionary Power MOSFETs associate a  
vertical structure to the company's strip layout to  
yield one of the world's lowest on-resistance and  
gate charge. They are therefore suitable for the  
most demanding high efficiency converters and  
ideal for bridge topologies and ZVS phase-shift  
converters.  
S(3)  
AM01476v1  
Table 1. Device summary  
Order codes  
Marking  
Package  
Packaging  
STB24N60DM2  
STP24N60DM2  
STW24N60DM2  
D2PAK  
TO-220  
TO-247  
Tape and reel  
24N60DM2  
Tube  
March 2014  
DocID025499 Rev 3  
1/21  
This is information on a product in full production.  
www.st.com  

STP24N60DM2 替代型号

型号 品牌 替代类型 描述 数据表
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