Datasheet > STP24N60M6

STP24N60M6

更新时间： 2024-11-24 14:58:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	263K
描述
N沟道600 V、162 mOhm典型值、17 A MDmesh M6功率MOSFET，TO-220封装

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STP24N60M6 数据手册

STP24N60M6

Datasheet

N-channel 600 V, 162 mΩ typ., 17 A, MDmesh™ M6 Power MOSFET

in a TO-220 package

Features

max.

Order code

STP24N60M6

DS(on)

TAB

600 V

190 mΩ

17 A

•

Reduced switching losses

Lower R_DS(on)per area vs previous generation

Low gate input resistance

100% avalanche tested

TO-220

Zener-protected

D(2, TAB)

Applications

•

Switching applications

G(1)

LLC converters

Boost PFC converters

S(3)

AM01475V1

Description

The new MDmesh™ M6 technology incorporates the most recent advancements to

the well-known and consolidated MDmesh family of SJ MOSFETs.

STMicroelectronics builds on the previous generation of MDmesh devices through its

new M6 technology, which combines excellent R_DS(on)per area improvement with

one of the most effective switching behaviors available, as well as a user-friendly

experience for maximum end-application efficiency.

Product status link

STP24N60M6

Product summary

Order code

STP24N60M6

Marking

Package

Packing

24N60M6

TO-220

Tube

DS12716 - Rev 1 - August 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

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