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STP25N60M2-EP PDF预览

STP25N60M2-EP

更新时间: 2024-10-01 14:57:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
14页 269K
描述
N沟道600 V、0.175 Ohm典型值、18 A MDmesh M2 EP功率MOSFET,TO-220封装

STP25N60M2-EP 数据手册

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STP25N60M2-EP  
Datasheet  
N-channel 600 V, 0.175 Ω typ., 18 A MDmesh™ M2 EP  
Power MOSFET in a TO-220 package  
Features  
V
at T max.  
R
max.  
I
D
Order code  
DS  
J
DS(on)  
TAB  
STP25N60M2-EP  
650 V  
0.188 Ω  
18 A  
Extremely low gate charge  
3
2
Excellent output capacitance (COSS) profile  
Very low turn-off switching losses  
100% avalanche tested  
1
TO-220  
Zener-protected  
D(2, TAB)  
Applications  
Switching applications  
G(1)  
Tailored for Very high frequency converters (f > 150 kHz)  
Description  
S(3)  
AM01475V1  
This device is an N-channel Power MOSFET developed using MDmesh™  
M2 enhanced performance (EP) technology. Thanks to its strip layout and an  
improved vertical structure, the device exhibits low on-resistance, optimized switching  
characteristics with very low turn-off switching losses, rendering it suitable for the  
most demanding very high frequency converters.  
Product status link  
STP25N60M2-EP  
Product summary  
Order code  
Marking  
STP25N60M2-EP  
25N60M2EP  
TO-220  
Package  
Packing  
Tube  
DS10739 - Rev 4 - May 2018  
For further information contact your local STMicroelectronics sales office.  
www.st.com  

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