Datasheet > STP25N60M2-EP

STP25N60M2-EP

更新时间： 2024-11-24 14:57:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	269K
描述
N沟道600 V、0.175 Ohm典型值、18 A MDmesh M2 EP功率MOSFET，TO-220封装

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STP25N60M2-EP 数据手册

STP25N60M2-EP

Datasheet

N-channel 600 V, 0.175 Ω typ., 18 A MDmesh™ M2 EP

Power MOSFET in a TO-220 package

Features

at T max.

max.

Order code

DS(on)

TAB

STP25N60M2-EP

650 V

0.188 Ω

18 A

•

Extremely low gate charge

Excellent output capacitance (C_OSS) profile

Very low turn-off switching losses

100% avalanche tested

TO-220

Zener-protected

D(2, TAB)

Applications

•

Switching applications

G(1)

Tailored for Very high frequency converters (f > 150 kHz)

Description

S(3)

AM01475V1

This device is an N-channel Power MOSFET developed using MDmesh™

M2 enhanced performance (EP) technology. Thanks to its strip layout and an

improved vertical structure, the device exhibits low on-resistance, optimized switching

characteristics with very low turn-off switching losses, rendering it suitable for the

most demanding very high frequency converters.

Product status link

STP25N60M2-EP

Product summary

Order code

Marking

STP25N60M2-EP

25N60M2EP

TO-220

Package

Packing

Tube

DS10739 - Rev 4 - May 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...14

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