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STP26N60M2 PDF预览

STP26N60M2

更新时间: 2023-12-20 18:45:40
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
16页 800K
描述
N沟道600 V、0.14 Ohm典型值、20 A MDmesh M2功率MOSFET,TO-220封装

STP26N60M2 数据手册

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STP26N60M2, STW26N60M2  
N-channel 600 V, 0.14 Ω typ., 20 A MDmesh™ M2  
Power MOSFETs in TO-220 and TO-247 packages  
Datasheet - production data  
Features  
TAB  
VDS  
TJmax  
@
RDS(on)  
max.  
Order code  
ID  
PTOT  
STP26N60M2  
STW26N60M2  
650 V  
0.165 Ω  
20 A  
169 W  
3
3
2
2
1
Extremely low gate charge  
Excellent output capacitance (COSS) profile  
100% avalanche tested  
1
TO-247  
TO-220  
Zener-protected  
Applications  
Figure 1: Internal schematic diagram  
Switching applications  
Description  
These devices are N-channel Power MOSFETs  
developed using MDmesh™ M2 technology.  
Thanks to their strip layout and improved vertical  
structure, these devices exhibit low on-resistance  
and optimized switching characteristics,  
rendering them suitable for the most demanding  
high efficiency converters.  
Table 1: Device summary  
Marking  
Order code  
STP26N60M2  
STW26N60M2  
Package  
TO-220  
TO-247  
Packing  
26N60M2  
Tube  
March 2017  
DocID028178 Rev 2  
1/16  
www.st.com  
This is information on a product in full production.  

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