Datasheet > STP26N65DM2

STP26N65DM2

更新时间： 2024-11-24 14:57:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	264K
描述
N沟道650 V、0.156 Ohm典型值、20 A MDmesh DM2功率MOSFET，TO-220封装

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中文翻译

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技术参数
数据手册

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STP26N65DM2 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
Factory Lead Time：	17 weeks	风险等级：	2.1
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

STP26N65DM2 数据手册

STP26N65DM2

Datasheet

N-channel 650 V, 0.156 Ω typ., 20 A, MDmesh™ DM2

Power MOSFET in a TO-220 package

Features

DS(on)

max.

TOT

Order code

TAB

STP26N65DM2

650 V

0.190 Ω

20 A

170 W

•

Fast-recovery body diode

Extremely low gate charge and input capacitance

Low on-resistance

TO-220

100% avalanche tested

Extremely high dv/dt ruggedness

Zener-protected

D(2, TAB)

Applications

G(1)

•

Switching applications

Description

S(3)

AM01475V1

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-

recovery diode series. It offers very low recovery charge (Q_rr) and time (t_rr) combined

with low R_DS(on), rendering it suitable for the most demanding high-efficiency

converters and ideal for bridge topologies and ZVS phase-shift converters.

Product status link

STP26N65DM2

Product summary

Order code

Marking

STP26N65DM2

26N65DM2

TO-220

Package

Packing

Tube

DS12621 - Rev 1 - July 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...13

中文翻译

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