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STP21NM60ND PDF预览

STP21NM60ND

更新时间: 2024-11-23 04:01:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
18页 546K
描述
N-channel 600 V, 0.17 ヘ, 17 A FDmesh⑩ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247

STP21NM60ND 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:ROHS COMPLIANT, TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:8.56
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:222398Samacsys Pin Count:3
Samacsys Part Category:TransistorSamacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:TO-220 (dual gauge)Samacsys Released Date:2015-07-28 07:41:53
Is Samacsys:N雪崩能效等级(Eas):610 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):17 A最大漏极电流 (ID):17 A
最大漏源导通电阻:0.22 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):140 W最大脉冲漏极电流 (IDM):68 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn) - annealed
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP21NM60ND 数据手册

 浏览型号STP21NM60ND的Datasheet PDF文件第2页浏览型号STP21NM60ND的Datasheet PDF文件第3页浏览型号STP21NM60ND的Datasheet PDF文件第4页浏览型号STP21NM60ND的Datasheet PDF文件第5页浏览型号STP21NM60ND的Datasheet PDF文件第6页浏览型号STP21NM60ND的Datasheet PDF文件第7页 
STP/F21NM60ND-STW21NM60ND  
STB21NM60ND-STI21NM60ND  
N-channel 600 V, 0.17 , 17 A FDmesh™ II Power MOSFET  
D2PAK, I2PAK, TO-220FP, TO-220, TO-247  
Features  
VDSS @  
TJmax  
RDS(on)  
max  
Type  
ID  
3
3
1
3
2
2
1
1
STB21NM60ND  
STI21NM60ND  
STF21NM60ND  
STP21NM60ND  
STW21NM60ND  
650 V  
650 V  
650 V  
650 V  
650 V  
< 0.22 Ω  
< 0.22 Ω  
< 0.22 Ω  
< 0.22 Ω  
< 0.22 Ω  
17 A  
17 A  
17 A(1)  
D2PAK  
TO-220  
TO-220FP  
17 A  
17 A  
1. Limited only by maximum temperature allowed  
3
2
3
2
1
1
The worldwide best R  
*area amongst the  
I2PAK  
TO-247  
DS(on)  
fast recovery diode devices  
100% avalanche tested  
Low input capacitance and gate charge  
Low gate input resistance  
Figure 1.  
Internal schematic diagram  
Extremely high dv/dt and avalanche  
capabilities  
Application  
Switching applications  
Description  
The FDmesh™ II series belongs to the second  
generation of MDmesh™ technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the company's strip layout  
and associates all advantages of reduced on-  
resistance and fast switching with an intrinsic fast-  
recovery body diode.It is therefore strongly  
recommended for bridge topologies, in ZVS  
phase-shift converters.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STB21NM60ND  
STI21NM60ND  
STF21NM60ND  
STP21NM60ND  
STW21NM60ND  
21NM60ND  
21NM60ND  
21NM60ND  
21NM60ND  
21NM60ND  
PAK  
PAK  
Tape and reel  
Tube  
TO-220FP  
TO-220  
TO-247  
Tube  
Tube  
Tube  
April 2008  
Rev 2  
1/18  
www.st.com  
18  

STP21NM60ND 替代型号

型号 品牌 替代类型 描述 数据表
STP22NM60N STMICROELECTRONICS

类似代替

N-channel 600 V, 0.2 Ω, 16 A MDmesh™ II Po
STP23NM60ND STMICROELECTRONICS

类似代替

N-channel 600 V - 0.150 Ω - 20 A - D2/I2PAK -
STP15NM60ND STMICROELECTRONICS

类似代替

N-channel 600 V - 0.27 Ω - 14 A - FDmesh™ II

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