Datasheet > STP220N6F7

STP220N6F7

更新时间： 2024-11-27 14:57:59

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	555K
描述
N沟道60 V、0.0021 mOhm典型值、120 A STripFET F7功率MOSFET，TO-220封装

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STP220N6F7 数据手册

STP220N6F7

N-channel 60 V, 0.0021 Ω typ., 120 A, STripFET™ F7

Power MOSFET in a TO-220 package

Datasheet - production data

Features

Order code

V_DS

R_DS(on)max

I_D

P_TOT

STP220N6F7

60 V

0.0024 Ω

120 A

237 W



Among the lowest R_DS(on)on the market

Excellent figure of merit (FoM)

Low C_rss/C_issratio for EMI immunity

High avalanche ruggedness

Applications



Switching applications

Description

Figure 1: Internal schematic diagram

This N-channel Power MOSFET utilizes

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low on-

state resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

Table 1: Device summary

Order code

Marking

220N6F7

Package

Packaging

STP220N6F7

TO-220

Tube

October 2015

DocID026547 Rev 3

1/13

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...13

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