5秒后页面跳转
STP22NE03L PDF预览

STP22NE03L

更新时间: 2024-11-22 22:12:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
5页 78K
描述
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

STP22NE03L 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.89
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):22 A最大漏极电流 (ID):22 A
最大漏源导通电阻:0.06 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):60 W
最大脉冲漏极电流 (IDM):88 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON

STP22NE03L 数据手册

 浏览型号STP22NE03L的Datasheet PDF文件第2页浏览型号STP22NE03L的Datasheet PDF文件第3页浏览型号STP22NE03L的Datasheet PDF文件第4页浏览型号STP22NE03L的Datasheet PDF文件第5页 
STP22NE03L  
N - CHANNEL ENHANCEMENT MODE  
" SINGLE FEATURE SIZE " POWER MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STP22NE03L  
30 V  
< 0.05 Ω  
22 A  
TYPICAL RDS(on) = 0.034 Ω  
EXCEPTIONAL dv/dt CAPABILITY  
100% AVALANCHE TESTED  
LOW GATE CHARGE 100 oC  
APPLICATION ORIENTED  
CHARACTERIZATION  
3
2
DESCRIPTION  
This Power Mosfet is the latest development of  
SGS-THOMSON unique "Single Feature Size  
1
"
TO-220  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalance characteristics and  
less critical alignment steps therefore a remark-  
able manufacturing reproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC & DC-AC CONVERTERS  
AUTOMOTIVE ENVIRONMENT (INJECTION,  
ABS, AIR-BAG, LAMPDRIVERS, Etc. )  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
30  
V
V
30  
± 15  
V
o
Drain Current (continuous) at Tc = 25 C  
22  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
16  
A
I
DM()  
Drain Current (pulsed)  
88  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
60  
W
Derating Factor  
0.4  
6
W/oC  
V/ns  
oC  
oC  
dv/dt  
Tstg  
Tj  
Peak Diode Recovery voltage slope  
Storage Temperature  
-65 to 175  
Max. Operating Junction Temperature  
175  
() Pulse width limited by safe operating area  
(1) ISD 22 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX  
1/5  
January 1998  

与STP22NE03L相关器件

型号 品牌 获取价格 描述 数据表
STP22NE10L STMICROELECTRONICS

获取价格

N - CHANNEL 100V - 0.07 ohm - 22A TO-220 STripFET POWER MOSFET
STP22NF03L STMICROELECTRONICS

获取价格

N-CHANNEL 30V - 0.038ohm - 22A TO-220 STripFE
STP22NF03L_07 STMICROELECTRONICS

获取价格

N-channel 30V - 0.0038ヘ - 22A - TO-220 STripF
STP22NF03L_08 STMICROELECTRONICS

获取价格

N-channel 30 V, 0.0038 Ω, 22 A, TO-220 STripF
STP22NM50 STMICROELECTRONICS

获取价格

N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PA
STP22NM50FP STMICROELECTRONICS

获取价格

N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PA
STP22NM60 STMICROELECTRONICS

获取价格

N-CHANNEL 600V - 0.19 ohm - 22A TO-220/FP/D2P
STP22NM60FP STMICROELECTRONICS

获取价格

22A, 600V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FP, 3 PIN
STP22NM60N STMICROELECTRONICS

获取价格

N-channel 600 V, 0.2 Ω, 16 A MDmesh™ II Po
STP22NS25Z STMICROELECTRONICS

获取价格

N-CHANNEL 250V - 0.13ohm - 22A TO-220/D2PAK Z