品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | / | |
页数 | 文件大小 | 规格书 |
5页 | 78K | |
描述 | ||
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET |
是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | TO-220AB | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.89 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 22 A | 最大漏极电流 (ID): | 22 A |
最大漏源导通电阻: | 0.06 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 60 W |
最大脉冲漏极电流 (IDM): | 88 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STP22NE10L | STMICROELECTRONICS |
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N - CHANNEL 100V - 0.07 ohm - 22A TO-220 STripFET POWER MOSFET | |
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N-CHANNEL 30V - 0.038ohm - 22A TO-220 STripFE | |
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N-channel 30V - 0.0038ヘ - 22A - TO-220 STripF | |
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N-channel 30 V, 0.0038 Ω, 22 A, TO-220 STripF | |
STP22NM50 | STMICROELECTRONICS |
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N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PA | |
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N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PA | |
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N-CHANNEL 600V - 0.19 ohm - 22A TO-220/FP/D2P | |
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22A, 600V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FP, 3 PIN | |
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N-channel 600 V, 0.2 Ω, 16 A MDmesh⢠II Po | |
STP22NS25Z | STMICROELECTRONICS |
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N-CHANNEL 250V - 0.13ohm - 22A TO-220/D2PAK Z |