Datasheet > STP2301_V1

STP2301_V1

更新时间： 2024-11-26 12:24:19

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
7页	371K
描述
P Channel Enhancement Mode MOSFET

阅读下载

中文翻译

获取价格

如果您发现信息不准确，欢迎纠错

STP2301_V1 数据手册

STP2301

P Channel Enhancement Mode MOSFET

-2.8A

DESCRIPTION

The STP2301 is the P-Channel logic enhancement mode power field effect transistor is

produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage application such as cellular phone

and notebook computer power management and other batter powered circuits, and

low in-line power loss are needed in a very small outline surface mount package.

FEATURE

PIN CONFIGURATION

SOT-23

ꢀ

-20V/-2.8A, R_DS(ON)= 90m-ohm (Typ.)

@VGS = -4.5V

-20V/-2.0A, R_DS(ON)= 110m-ohm

@VGS = -2.5V

Super high density cell design for

extremely low R_DS(ON)

Exceptional on-resistance and maximum

DC current capability

SOT-23 package design

1.Gate 2.Source 3.Drain

PART MARKING

SOT-23

S01YA

Y: Year Code A: Process Code

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STP2301 2007. V1

12 3 4 5 6 7

中文翻译

下载PDF

型号	品牌	获取价格	描述	数据表
STP23N80K5	STMICROELECTRONICS	获取价格	N沟道800 V、0.23 Ohm典型值、16 A MDmesh K5功率MOSFET，T
STP23NM50N	STMICROELECTRONICS	获取价格	N-channel 500 V, 0.162 Î©, 17 A TO-220, TO-22
STP23NM60N	STMICROELECTRONICS	获取价格	N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2
STP23NM60ND	STMICROELECTRONICS	获取价格	N-channel 600 V - 0.150 Ω - 20 A - D2/I2PAK -
STP240N10F7	STMICROELECTRONICS	获取价格	N沟道100 V、2.85 mOhm典型值、110 A STripFET F7功率MOSF
STP24DP05	STMICROELECTRONICS	获取价格	24-bit constant current LED sink driver with output error detection
STP24DP05BTR	STMICROELECTRONICS	获取价格	24-bit constant current LED sink driver with output error detection
STP24N60DM2	STMICROELECTRONICS	获取价格	N沟道600 V、0.175 Ohm典型值、18 A MDmesh DM2功率MOSFET
STP24N60M2	STMICROELECTRONICS	获取价格	N-channel 600 V, 0.168 Î© typ., 18 A MDmesh I
STP24N60M6	STMICROELECTRONICS	获取价格	N沟道600 V、162 mOhm典型值、17 A MDmesh M6功率MOSFET，T