Datasheet > STP23N80K5

STP23N80K5

更新时间： 2024-11-24 14:58:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	716K
描述
N沟道800 V、0.23 Ohm典型值、16 A MDmesh K5功率MOSFET，TO-220封装

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STP23N80K5 数据手册

STP23N80K5

N-channel 800 V, 0.23 Ω typ., 16 A MDmesh™ K5

Power MOSFET in a TO-220 package

Datasheet - production data

Features

Order code

V_DS

R_DS(on)max.

I_D

P_TOT

STP23N80K5 800 V

0.28 Ω

16 A 190 W



Industry’s lowest R_DS(on)x area

Industry’s best figure of merit (FoM)

Ultra low gate charge

100% avalanche tested

Zener-protected

Applications



Switching applications

Figure 1: Internal schematic diagram

Description

This very high voltage N-channel Power

MOSFET is designed using MDmesh™ K5

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

Table 1: Device summary

Order code

Marking

Package

Packing

STP23N80K5

23N80K5

TO-220

Tube

October 2015

DocID028451 Rev 1

1/13

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...13

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