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STP24N60M2 PDF预览

STP24N60M2

更新时间: 2024-11-23 12:26:43
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
22页 1573K
描述
N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages

STP24N60M2 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:2.26
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:222401Samacsys Pin Count:3
Samacsys Part Category:TransistorSamacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:TO-220 TYPE ASamacsys Released Date:2015-07-28 07:28:20
Is Samacsys:N雪崩能效等级(Eas):180 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (ID):18 A
最大漏源导通电阻:0.19 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):72 A表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP24N60M2 数据手册

 浏览型号STP24N60M2的Datasheet PDF文件第2页浏览型号STP24N60M2的Datasheet PDF文件第3页浏览型号STP24N60M2的Datasheet PDF文件第4页浏览型号STP24N60M2的Datasheet PDF文件第5页浏览型号STP24N60M2的Datasheet PDF文件第6页浏览型号STP24N60M2的Datasheet PDF文件第7页 
STB24N60M2, STI24N60M2,  
STP24N60M2, STW24N60M2  
N-channel 600 V, 0.168 Ω typ., 18 A MDmesh II Plus™ low Qg  
Power MOSFET in D2PAK, I2PAK, TO-220 and TO-247 packages  
Datasheet  
production data  
Features  
TAB  
TAB  
Order codes VDS @ TJmax RDS(on) max  
ID  
2
1
3
STB24N60M2  
STI24N60M2  
3
D2PAK  
2
1
I2PAK  
650 V  
0.19 Ω  
18 A  
STP24N60M2  
STW24N60M2  
TAB  
Extremely low gate charge  
3
3
Lower RDS(on) x area vs previous generation  
Low gate input resistance  
100% avalanche tested  
2
2
1
1
TO-220  
TO-247  
Figure 1. Internal schematic diagram  
Zener-protected  
D(2, TAB)  
Applications  
Switching applications  
Description  
G(1)  
These devices are N-channel Power MOSFETs  
developed using a new generation of MDmesh™  
technology: MDmesh II Plus™ low Qg. These  
revolutionary Power MOSFETs associate a  
vertical structure to the company's strip layout to  
yield one of the world's lowest on-resistance and  
gate charge. They are therefore suitable for the  
most demanding high efficiency converters.  
S(3)  
AM01476v1  
Table 1. Device summary  
Order codes  
Marking  
Package  
Packaging  
STB24N60M2  
STI24N60M2  
STP24N60M2  
STW24N60M2  
D2PAK  
I2PAK  
Tape and reel  
24N60M2  
TO-220  
TO-247  
Tube  
May 2013  
DocID023964 Rev 4  
1/22  
This is information on a product in full production.  
www.st.com  
22  

STP24N60M2 替代型号

型号 品牌 替代类型 描述 数据表
STP24NM60N STMICROELECTRONICS

类似代替

N-channel 600 V, 0.168 Ω, 17 A MDmesh™ II
STI24NM60N STMICROELECTRONICS

功能相似

N-channel 600 V, 0.168 Ω, 17 A MDmesh™ II

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