Datasheet > STP240N10F7

STP240N10F7

更新时间： 2024-11-27 14:57:43

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意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	616K
描述
N沟道100 V、2.85 mOhm典型值、110 A STripFET F7功率MOSFET，TO-220封装

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STP240N10F7 数据手册

STP240N10F7

N-channel 100 V, 2.85 mΩ typ., 110 A STripFET™ F7

Power MOSFET in a TO-220 package

Datasheet

production data

Features

Order code

V_DS

R_DS(on)max.

I_D

TAB

STP240N10F7

100 V

3.2 mΩ

110 A

• Ultra low on-resistance

• 100% avalanche tested

Applications

TO-220

• High current switching applications

Description

This N-channel Power MOSFET utilizes the

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low on-

state resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

Figure 1. Internal schematic diagram

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Table 1. Device summary

Order code

Marking

Package

TO-220

Packaging

STP240N10F7

240N10F7

Tube

July 2014

DocID023934 Rev 3

1/13

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...13

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