5秒后页面跳转
STP22NE10L PDF预览

STP22NE10L

更新时间: 2024-11-22 22:12:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 85K
描述
N - CHANNEL 100V - 0.07 ohm - 22A TO-220 STripFET POWER MOSFET

STP22NE10L 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.65
Is Samacsys:N其他特性:LOGIC LEVEL COMPATIBLE
雪崩能效等级(Eas):250 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):22 A
最大漏极电流 (ID):22 A最大漏源导通电阻:0.1 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):245极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):90 W最大脉冲漏极电流 (IDM):88 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP22NE10L 数据手册

 浏览型号STP22NE10L的Datasheet PDF文件第2页浏览型号STP22NE10L的Datasheet PDF文件第3页浏览型号STP22NE10L的Datasheet PDF文件第4页浏览型号STP22NE10L的Datasheet PDF文件第5页浏览型号STP22NE10L的Datasheet PDF文件第6页浏览型号STP22NE10L的Datasheet PDF文件第7页 
STP22NE10L  
N - CHANNEL 100V - 0.07 - 22A TO-220  
STripFET POWER MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STP22NE10L  
100 V  
< 0.085 Ω  
22 A  
TYPICAL RDS(on) = 0.07 Ω  
LOW THRESHOLD DRIVE  
LOGIC LEVEL DEVICE  
DESCRIPTION  
This Power MOSFET is the latest developmentof  
STMicroelectronics unique ”Single Feature  
Size ” strip-based process. The resulting  
transistor shows extremely high packing density  
for low on-resistance, rugged avalanche  
characteristics and less critical alignment steps  
3
2
1
TO-220  
therefore  
a
remarkable  
manufacturing  
reproducibility.  
APPLICATIONS  
INTERNAL SCHEMATIC DIAGRAM  
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC & DC-AC CONVERTERS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
100  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
V
V
100  
± 20  
22  
V
o
Drain Current (continuous) at Tc = 25 C  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
14  
A
IDM  
(
Drain Current (pulsed)  
88  
A
)  
o
Ptot  
Total Dissipation at Tc = 25 C  
90  
W
Derating Factor  
0.6  
W/oC  
mJ  
oC  
oC  
EAS(1) Single Pulse Avalanche Energy  
250  
Tstg  
Tj  
Storage Temperature  
-65 to 175  
Max. Operating Junction Temperature  
() Pulse width limitedby safe operating area  
175  
( 1) starting Tj = 25 oC, ID =22A , VDD = 50V  
1/8  
November 1999  

STP22NE10L 替代型号

型号 品牌 替代类型 描述 数据表
STP20N10L STMICROELECTRONICS

功能相似

N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR
STP20N10 STMICROELECTRONICS

功能相似

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

与STP22NE10L相关器件

型号 品牌 获取价格 描述 数据表
STP22NF03L STMICROELECTRONICS

获取价格

N-CHANNEL 30V - 0.038ohm - 22A TO-220 STripFE
STP22NF03L_07 STMICROELECTRONICS

获取价格

N-channel 30V - 0.0038ヘ - 22A - TO-220 STripF
STP22NF03L_08 STMICROELECTRONICS

获取价格

N-channel 30 V, 0.0038 Ω, 22 A, TO-220 STripF
STP22NM50 STMICROELECTRONICS

获取价格

N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PA
STP22NM50FP STMICROELECTRONICS

获取价格

N-CHANNEL 500V - 0.16ohm - 20A TO-220/FP/D2PA
STP22NM60 STMICROELECTRONICS

获取价格

N-CHANNEL 600V - 0.19 ohm - 22A TO-220/FP/D2P
STP22NM60FP STMICROELECTRONICS

获取价格

22A, 600V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220FP, 3 PIN
STP22NM60N STMICROELECTRONICS

获取价格

N-channel 600 V, 0.2 Ω, 16 A MDmesh™ II Po
STP22NS25Z STMICROELECTRONICS

获取价格

N-CHANNEL 250V - 0.13ohm - 22A TO-220/D2PAK Z
STP2301 ETC

获取价格

P沟道MOS管2.8A20V