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STP20N10L PDF预览

STP20N10L

更新时间: 2024-02-14 13:12:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
10页 205K
描述
N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

STP20N10L 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:ISOWATT220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.74
Is Samacsys:N雪崩能效等级(Eas):120 mJ
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):12 A
最大漏极电流 (ID):12 A最大漏源导通电阻:0.12 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):90 pF
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL功耗环境最大值:35 W
最大功率耗散 (Abs):40 W最大脉冲漏极电流 (IDM):80 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大开启时间(吨):245 nsBase Number Matches:1

STP20N10L 数据手册

 浏览型号STP20N10L的Datasheet PDF文件第2页浏览型号STP20N10L的Datasheet PDF文件第3页浏览型号STP20N10L的Datasheet PDF文件第4页浏览型号STP20N10L的Datasheet PDF文件第5页浏览型号STP20N10L的Datasheet PDF文件第6页浏览型号STP20N10L的Datasheet PDF文件第7页 
STP20N10L  
STP20N10LFI  
N - CHANNEL ENHANCEMENT MODE  
LOW THRESHOLD POWER MOS TRANSISTOR  
TYPE  
VDSS  
RDS(on)  
ID  
STP20N10L  
STP20N10LFI  
100 V  
100 V  
< 0.12 Ω  
< 0.12 Ω  
20 A  
12 A  
TYPICAL RDS(on) = 0.09 Ω  
AVALANCHE RUGGED TECHNOLOGY  
100% AVALANCHE TESTED  
REPETITIVE AVALANCHE DATA AT 100oC  
LOW GATE CHARGE  
3
3
2
2
1
1
HIGH CURRENT CAPABILITY  
175oC OPERATING TEMPERATURE  
LOGIC LEVEL COMPATIBLE INPUT  
APPLICATION ORIENTED  
TO-220  
ISOWATT220  
CHARACTERIZATION  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
REGULATORS  
DC-DC & DC-AC CONVERTERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
AUTOMOTIVE ENVIRONMENT (INJECTION,  
ABS, AIR-BAG, LAMPDRIVERS, Etc.)  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
STP20N10L  
STP20N10LFI  
VDS  
VDG R  
VGS  
ID  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
Drain Current (continuous) at Tc = 25 oC  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
100  
100  
± 15  
V
V
V
20  
14  
12  
8
A
ID  
A
IDM()  
Ptot  
80  
80  
A
Total Dissipation at Tc = 25 oC  
105  
0.7  
40  
W
W/oC  
V
oC  
oC  
Derating Factor  
0.27  
2000  
VISO  
Tstg  
Tj  
Insulation Withstand Voltage (DC)  
Storage Temperature  
-65 to 175  
175  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/10  
November 1996  

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