Datasheet > STP210N75F6

STP210N75F6

更新时间： 2024-11-26 12:00:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	693K
描述
N-channel 75 V, 3 mÎ©, 120 A TO-220 STripFETâ¢ VI DeepGATEâ¢ Power MOSFET

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替代型号

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STP210N75F6 数据手册

STP210N75F6

N-channel 75 V, 3 mΩ, 120 A TO-220

STripFET™ VI DeepGATE™ Power MOSFET

Features

Order code

V_DSS

R_DS(on)max

< 3.7 mΩ

I_D

STP210N75F6

75 V

120 A

■ Low gate charge

■ Very low on-resistance

■ High avalanche ruggedness

TO-220

Application

Switching applications

Description

Figure 1.

Internal schematic diagram

This product is a 75 V N-channel STripFET™ VI

Power MOSFET based on the ST’s proprietary

STripFET™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest

$ꢅꢆꢇ

in all packages.

DS(on)

'ꢅꢁꢇ

3ꢅꢈꢇ

!-ꢀꢁꢂꢃꢄVꢁ

Table 1.

Device summary

Order code

Marking

Package

TO-220

Packaging

STP210N75F6

210N75F6

Tube

May 2011

Doc ID 018507 Rev 1

1/13

www.st.com

12 3 4 5 6 7...13

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STP210N75F6 替代型号

型号	品牌	替代类型	描述	数据表
FDP032N08	FAIRCHILD	功能相似	N-Channel PowerTrench㈢ MOSFET 75V, 235A, 3.2m

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