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STP20NE06LFP

更新时间： 2024-11-22 22:42:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
9页	106K
描述
N - CHANNEL 60V - 0.06 ohm - 20A TO-220/TO-220FP STripFET POWER MOSFET

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STP20NE06LFP 数据手册

STP20NE06L

STP20NE06LFP

N - CHANNEL 60V - 0.06 Ω - 20A TO-220/TO-220FP

STripFET POWER MOSFET

TYPE

V_DSS

R_DS(on)

I_D

STP20NE06L

STP20NE06LFP

60 V

< 0.07 Ω

20 A

13 A

■

TYPICAL R_DS(on)= 0.06 Ω

EXCEPTIONAL dv/dt CAPABILITY

100% AVALANCHE TESTED

LOW GATE CHARGE 100 ^oC

APPLICATIONORIENTED

CHARACTERIZATION

DESCRIPTION

This Power Mosfet is the latest development of

STMicroelectronics unique ” Single Feature

Size ” strip-based process. The resulting transi-

stor shows extremely high packing density for low

on-resistance, rugged avalance characteristics

and less critical alignment steps therefore a re-

markable manufacturingreproducibility.

TO-220

TO-220FP

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

DC MOTOR CONTROL

DC-DC & DC-AC CONVERTERS

SYNCHRONOUS RECTIFICATION

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

STP20NE06 STP20NE06FP

Unit

V_DS

V_DGR

V_GS

I_D

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

± 20

Drain Current (continuous) at T_c= 25 C

I_D

Drain Current (continuous) at T_c= 100 C

_DM(• )

Drain Current (pulsed)

P_tot

Total Dissipation at T_c= 25 C

Derating Factor

0.47

0.2

2000

W/^oC

V_ISO

Insulation Withstand Voltage (DC)

Peak Diode Recovery voltage slope

Storage Temperature

dv/dt

T_stg

T_j

V/ns

^oC

-65 to 175

Max. Operating Junction Temperature

175

(•) Pulse width limited by safe operating area

( 1) I_SD≤ 20 A, di/dt ≤ 300 A/µs, V_DD≤ V_(BR)DSS, T_j≤ T_JMAX

1/9

April 1999

12 3 4 5 6 7...9

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