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STP210NF02 PDF预览

STP210NF02

更新时间: 2024-11-25 22:07:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
14页 610K
描述
N-CHANNEL 20V - 0.0026 ohm - 120A DPAK/IPAK/TO-220 STripFET⑩ II POWER MOSFET

STP210NF02 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.76雪崩能效等级(Eas):2300 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:20 V最大漏极电流 (Abs) (ID):120 A
最大漏极电流 (ID):120 A最大漏源导通电阻:0.0032 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):300 W
最大脉冲漏极电流 (IDM):480 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STP210NF02 数据手册

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STP210NF02  
STB210NF02 STB210NF02-1  
²
²
N-CHANNEL 20V - 0.0026 - 120A D PAK/I PAK/TO-220  
STripFET™ II POWER MOSFET  
AUTOMOTIVE SPECIFIC  
V
R
I
D
TYPE  
DSS  
DS(on)  
STB210NF02/-1  
STP210NF02  
20 V  
20 V  
<0.0032 Ω  
<0.0032 Ω  
120 A(**)  
120 A(**)  
TYPICAL R (on) = 0.0026Ω  
DS  
3
STANDARD THRESHOLD DRIVE  
100% AVALANCHE TESTED  
3
1
2
1
²
I PAK  
²
D PAK  
TO-263  
TO-262  
DESCRIPTION  
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™" strip-  
based process. The resulting transistor shows extremely  
high packing density for low on-resistance, rugged  
avalanche characteristics and less critical alignment  
3
2
1
steps  
therefore  
a
remarkable  
manufacturing  
TO-220  
reproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC & DC-AC CONVERTERS  
Ordering Information  
SALES TYPE  
STB210NF02  
STB210NF02T4  
STP210NF02  
MARKING  
B210NF02  
B210NF02  
P210NF02  
B210NF02  
PACKAGE  
PACKAGING  
2
TUBE  
TAPE & REEL  
TUBE  
D PAK  
2
D PAK  
TO-220  
2
STB210NF02-1  
TUBE  
I PAK  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Drain-source Voltage (V = 0)  
GS  
Value  
20  
20  
Unit  
V
V
V
DS  
V
Drain-gate Voltage (R = 20 k)  
DGR  
GS  
V
Gate- source Voltage  
Drain Current (continuous) at T = 25°C  
Drain Current (continuous) at T = 100°C  
± 20  
120  
120  
480  
300  
2.0  
1
V
A
A
A
GS  
I (**)  
D
C
I
D
C
I
()  
Drain Current (pulsed)  
DM  
P
Total Dissipation at T = 25°C  
W
tot  
C
Derating Factor  
W/°C  
V/ns  
J
(1)  
(2)  
Peak Diode Recovery voltage slope  
Single Pulse Avalanche Energy  
Storage Temperature  
dv/dt  
E
2.3  
AS  
T
stg  
-55 to 175  
°C  
T
Operating Junction Temperature  
j
() Pulse width limited by safe operating area.  
(**) Current Limited by Package  
(1) I 120A, di/dt 250A/µs, V V  
, T T  
JMAX  
SD  
DD  
(BR)DSS  
j
o
(2) Starting T = 25 C, I = 60 A, V = 14 V  
j
D
DD  
October 2002  
1/14  
.

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