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STP21NM60N_08 PDF预览

STP21NM60N_08

更新时间: 2024-01-31 13:28:26
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
18页 563K
描述
N-channel 600 V - 0.17 Ω - 17 A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmesh™ Power MOSFET

STP21NM60N_08 数据手册

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STP21NM60N-F21NM60N-STW21NM60N  
STB21NM60N-STB21NM60N-1  
N-channel 600 V - 0.17 - 17 A TO-220 - TO-220FP - D2PAK -  
I2PAK - TO-247 second generation MDmesh™ Power MOSFET  
Features  
VDSS  
(@Tjmax)  
RDS(on)  
max  
Type  
ID  
3
3
3
2
1
2
1
STB21NM60N  
STB21NM60N-1  
STF21NM60N  
STP21NM60N  
STW21NM60N  
650 V  
650 V  
650 V  
650 V  
650 V  
< 0.22 Ω  
< 0.22 Ω  
< 0.22 Ω  
< 0.22 Ω  
< 0.22 Ω  
17 A  
17 A  
1
D2PAK  
TO-220  
TO-220FP  
17 A(1)  
17 A  
17 A  
1. Limited by maximum temperature allowed  
3
3
2
2
1
1
100% avalanche tested  
I2PAK  
TO-247  
Low input capacitance and gate charge  
Low gate input resistance  
Figure 1.  
Internal schematic diagram  
Application  
Switching applications  
Description  
This series of devices implements the second  
generation of MDmesh™ technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the company’s strip layout to  
yield one of the world’s lowest on-resistance and  
gate charge. It is therefore suitable for the most  
demanding high efficiency converters.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STB21NM60N  
STB21NM60N-1  
STF21NM60N  
STP21NM60N  
STW21NM60N  
B21NM60N  
B21NM60N  
F21NM60N  
P21NM60N  
W21NM60N  
D2PAK  
I2PAK  
Tape and reel  
Tube  
TO-220FP  
TO-220  
TO-247  
Tube  
Tube  
Tube  
February 2008  
Rev 7  
1/18  
www.st.com  
18  

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