Datasheet > STP22NE03

STP22NE03

更新时间： 2024-11-25 22:12:19

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
5页	78K
描述
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

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STP22NE03 数据手册

STP22NE03L

N - CHANNEL ENHANCEMENT MODE

" SINGLE FEATURE SIZE " POWER MOSFET

TYPE

V_DSS

R_DS(on)

I_D

STP22NE03L

30 V

< 0.05 Ω

22 A

■

TYPICAL R_DS(on)= 0.034 Ω

EXCEPTIONAL dv/dt CAPABILITY

100% AVALANCHE TESTED

LOW GATE CHARGE 100 ^oC

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This Power Mosfet is the latest development of

SGS-THOMSON unique "Single Feature Size

TO-220

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalance characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SOLENOID AND RELAY DRIVERS

MOTOR CONTROL, AUDIO AMPLIFIERS

DC-DC & DC-AC CONVERTERS

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc. )

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

V_DGR

V_GS

I_D

Parameter

Value

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

± 15

Drain Current (continuous) at T_c= 25 C

I_D

Drain Current (continuous) at T_c= 100 C

_DM(•)

Drain Current (pulsed)

P_tot

Total Dissipation at T_c= 25 C

Derating Factor

0.4

W/^oC

V/ns

^oC

dv/dt

T_stg

T_j

Peak Diode Recovery voltage slope

Storage Temperature

-65 to 175

Max. Operating Junction Temperature

175

(•) Pulse width limited by safe operating area

(1) I_SD≤22 A, di/dt ≤ 300 A/µs, V_DD≤ V_(BR)DSS, T_j≤ T_JMAX

1/5

January 1998

12 3 4 5

中文翻译

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