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STP21NM50N_07 PDF预览

STP21NM50N_07

更新时间: 2024-02-18 05:48:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
18页 464K
描述
N-channel 500V - 0.15ヘ - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh⑩ Power MOSFET

STP21NM50N_07 数据手册

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STP/F21NM50N - STW21NM50N  
STB21NM50N - STB21NM50N-1  
N-channel 500V - 0.15- 18A TO-220/FP/D2/I2PAK/TO-247  
Second generation MDmesh™ Power MOSFET  
General features  
VDSS  
Type  
RDS(on)  
ID  
3
(@Tjmax)  
3
1
3
2
2
1
1
D2PAK  
STB21NM50N  
STB21NM50N-1  
STF21NM50N  
STP21NM50N  
STW21NM50N  
550V  
550V  
550V  
550V  
550V  
< 0.19  
< 0.19Ω  
< 0.19Ω  
< 0.19Ω  
< 0.19Ω  
18A  
18A  
TO-220  
TO-220FP  
18A(1)  
18A  
18A  
3
1. Limited by wire bonding  
2
1
I2PAK  
100% avalanche tested  
TO-247  
Low input capacitance and gate charge  
Low gate input resistance  
Internal schematic diagram  
Description  
The devices are realized with the second  
generation of MDmesh Technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the company's strip layout to  
yield one of the world's lowest on-resistance and  
gate charge. It is therefore suitable for the most  
demanding high efficiency converters  
Applications  
Switching application  
Order codes  
Part number  
Marking  
Package  
Packaging  
STB21NM50N  
STB21NM50N-1  
STF21NM50N  
STP21NM50N  
STW21NM50N  
B21NM50N  
B21NM50N  
F21NM50N  
P21NM50N  
W21NM50N  
D2PAK  
I2PAK  
Tape & reel  
Tube  
TO-220FP  
TO-220  
TO-247  
Tube  
Tube  
Tube  
January 2007  
Rev 6  
1/18  
www.st.com  
18  

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