5秒后页面跳转
STP15NM60ND PDF预览

STP15NM60ND

更新时间: 2024-01-07 09:53:45
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
19页 601K
描述
N-channel 600 V - 0.27 Ω - 14 A - FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247

STP15NM60ND 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:ROHS COMPLIANT, TO-220, 3 PIN
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.79
Is Samacsys:N雪崩能效等级(Eas):300 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):14 A最大漏极电流 (ID):14 A
最大漏源导通电阻:0.299 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):125 W最大脉冲漏极电流 (IDM):56 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP15NM60ND 数据手册

 浏览型号STP15NM60ND的Datasheet PDF文件第2页浏览型号STP15NM60ND的Datasheet PDF文件第3页浏览型号STP15NM60ND的Datasheet PDF文件第4页浏览型号STP15NM60ND的Datasheet PDF文件第5页浏览型号STP15NM60ND的Datasheet PDF文件第6页浏览型号STP15NM60ND的Datasheet PDF文件第7页 
STB15NM60ND - STF/I15NM60ND  
STP15NM60ND - STW15NM60ND  
N-channel 600 V - 0.27 - 14 A - FDmesh™ II Power MOSFET  
D2PAK, I2PAK, TO-220, TO-220FP, TO-247  
Features  
Type  
VDSS (@Tjmax)RDS(on) max  
ID  
3
3
2
STB15NM60ND  
STF15NM60ND  
STI15NM60ND  
STP15NM60ND  
STW15NM60ND  
14 A  
14 A  
1
1
D2PAK  
PAK  
650 V  
0.299 14 A(1)  
3
2
1
14 A  
14 A  
TO-247  
1. Limited only by maximum temperature allowed  
3
3
2
2
The worldwide best R  
* area amongst the  
1
1
DS(on)  
fast recovery diode devices  
TO-220FP  
TO-220  
100% avalanche tested  
Low input capacitance and gate charge  
Low gate input resistance  
Figure 1.  
Internal schematic diagram  
Extremely high dv/dt and avalanche  
capabilities  
Application  
Switching applications  
Description  
The FDmesh™ II series belongs to the second  
generation of MDmesh™ technology. This  
revolutionary Power MOSFET associates a new  
vertical structure to the company's strip layout  
and associates all advantages of reduced on-  
resistance and fast switching with an intrinsic fast-  
recovery body diode.Strongly recommended for  
bridge topologies, in ZVS phase-shift converters.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
D2PAK  
Packaging  
STB15NM60ND  
STF15NM60ND  
STI15NM60ND  
STP15NM60ND  
STW15NM60ND  
15NM60ND  
15NM60ND  
15NM60ND  
15NM60ND  
15NM60ND  
Tape and reel  
Tube  
TO-220FP  
I2PAK  
Tube  
TO-220  
TO-247  
Tube  
Tube  
April 2008  
Rev 2  
1/19  
www.st.com  
19  

STP15NM60ND 替代型号

型号 品牌 替代类型 描述 数据表
STP22NM60N STMICROELECTRONICS

类似代替

N-channel 600 V, 0.2 Ω, 16 A MDmesh™ II Po
STP23NM60ND STMICROELECTRONICS

类似代替

N-channel 600 V - 0.150 Ω - 20 A - D2/I2PAK -
STP21NM60ND STMICROELECTRONICS

类似代替

N-channel 600 V, 0.17 ヘ, 17 A FDmesh⑩ II Powe

与STP15NM60ND相关器件

型号 品牌 获取价格 描述 数据表
STP15NM65N STMICROELECTRONICS

获取价格

N-channel 650V - 0.25ヘ - 15.5A - TO-220/FP -
STP-1600-2115 BEL

获取价格

Toroidal Power Transformer, 1600VA, ROHS COMPLIANT
STP160N3LL STMICROELECTRONICS

获取价格

N沟道30 V、2.5 mOhm典型值、120 A STripFET H6功率MOSFET
STP160N75F3 STMICROELECTRONICS

获取价格

N-channel 75V - 3.5m ohm - 120A - TO-220 - TO-247 - D2PAK MDmesh TM low voltage Power MOSF
STP1612PW05 STMICROELECTRONICS

获取价格

16-channel LED driver with 16-bit PWM, 8-bit gain and full LED error detection
STP1612PW05MTR STMICROELECTRONICS

获取价格

16-channel LED driver with 16-bit PWM, 8-bit gain and full LED error detection
STP1612PW05QTR STMICROELECTRONICS

获取价格

16-channel LED driver with 16-bit PWM, 8-bit gain and full LED error detection
STP1612PW05TTR STMICROELECTRONICS

获取价格

16-channel LED driver with 16-bit PWM, 8-bit gain and full LED error detection
STP1612PW05XTTR STMICROELECTRONICS

获取价格

16-channel LED driver with 16-bit PWM, 8-bit gain and full LED error detection
STP16A60 SEMIWELL

获取价格

Bi-Directional Triode Thyristor