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STP160N3LL PDF预览

STP160N3LL

更新时间: 2024-11-24 14:57:51
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意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
13页 381K
描述
N沟道30 V、2.5 mOhm典型值、120 A STripFET H6功率MOSFET,TO-220封装

STP160N3LL 数据手册

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STP160N3LL  
N-channel 30 V, 2.5 mΩ typ., 120 A STripFET™ H6  
Power MOSFET in a TO-220 package  
Datasheet - production data  
Features  
Order code  
VDS  
RDS(on) max.  
ID  
PTOT  
STP160N3LL 30 V  
3.2 mΩ  
120 A 136 W  
Very low on-resistance  
Very low gate charge  
High avalanche ruggedness  
Low gate drive power loss  
Applications  
Switching applications  
Figure 1: Internal schematic diagram  
Description  
This device is an N-channel Power MOSFET  
developed using the STripFET™ H6 technology  
with a new trench gate structure. The resulting  
Power MOSFET exhibits very low RDS(on) in all  
packages.  
Table 1: Device summary  
Order code  
Marking  
Package  
Packing  
STP160N3LL  
160N3LL  
TO-220  
Tube  
June 2015  
DocID025073 Rev 3  
1/13  
www.st.com  
This is information on a product in full production.  

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