STP15NM65N

更新时间： 2024-11-23 04:01:47

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
18页	500K
描述
N-channel 650V - 0.25ヘ - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET

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中文翻译

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数据手册
替代型号

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STP15NM65N 数据手册

STF15NM65N-STI15NM65N-STW15NM65N

STB15NM65N-STP15NM65N

N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D²/I²PAK - TO-247

Second generation MDmesh™ Power MOSFET

Features

V_DSS

(@Tjmax)

Type

_DS(on)Max

I_D

STB15NM65N

STF15NM65N

STI15NM65N

STP15NM65N

STW15NM65N

710 V

< 0.27 Ω

15.5 A

15.5 A⁽¹⁾

15.5 A

I²PAK

TO-220

15.5 A

TO-220FP

15.5 A

1. Limited only by maximum temperature allowed

■ 100% avalanche tested

D²PAK

TO-247

■ Low input capacitance and gate charge

■ Low gate input resistance

Figure 1.

Internal schematic diagram

Application

■ Switching applications

Description

This series of devices implements the second

generation of MDmesh™ Technology. This

revolutionary Power MOSFET associates a new

vertical structure to the Company’s strip layout to

yield one of the world’s lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters

Table 1.

Device summary

Order codes

Marking

Package

I²PAK

Packaging

STI15NM65N

STF15NM65N

STP15NM65N

15NM65N

Tube

TO-220FP

TO-220

D²PAK

Tube

STB15NM65NT4

STW15NM65N

Tape & reel

Tube

TO-247

September 2007

Rev 1

1/18

www.st.com

12 3 4 5 6 7...18

中文翻译

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STP15NM65N 替代型号

型号	品牌	替代类型	描述	数据表
SIHP12N60E-GE3	VISHAY	功能相似	Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Met

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