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STN2NF06L PDF预览

STN2NF06L

更新时间: 2024-11-15 22:12:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管开关脉冲光电二极管
页数 文件大小 规格书
8页 293K
描述
N-CHANNEL 60V - 0.1 ohm - 2A SOT-223 STripFET⑩ II POWER MOSFET

STN2NF06L 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT-223包装说明:SOT-223, 4 PIN
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.3
Is Samacsys:N雪崩能效等级(Eas):200 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):2 A最大漏极电流 (ID):2 A
最大漏源导通电阻:0.14 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):3 W
最大脉冲漏极电流 (IDM):8 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STN2NF06L 数据手册

 浏览型号STN2NF06L的Datasheet PDF文件第2页浏览型号STN2NF06L的Datasheet PDF文件第3页浏览型号STN2NF06L的Datasheet PDF文件第4页浏览型号STN2NF06L的Datasheet PDF文件第5页浏览型号STN2NF06L的Datasheet PDF文件第6页浏览型号STN2NF06L的Datasheet PDF文件第7页 
STN2NF06L  
N-CHANNEL 60V - 0.1 - 2A SOT-223  
STripFET™ II POWER MOSFET  
V
R
I
TYPE  
DSS  
DS(on)  
D
STN2NF06L  
60 V  
<0.12 Ω  
2 A  
TYPICAL R (on) = 0.1 Ω  
DS  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
2
AVALANCHE RUGGED TECHNOLOGY  
LOW THRESHOLD DRIVE  
3
2
1
DESCRIPTION  
SOT-223  
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™"  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
less critical alignment steps therefore a remark-  
able manufacturing reproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
DC MOTOR CONTROL (DISK DRIVES, etc.)  
DC-DC & DC-AC CONVERTERS  
SYNCHRONOUS RECTIFICATION  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
60  
60  
± 16  
2
Unit  
V
V
DS  
Drain-source Voltage (V = 0)  
GS  
V
Drain-gate Voltage (R  
Gate- source Voltage  
= 20 k)  
GS  
V
DGR  
V
GS  
V
I
D
Drain Current (continuous) at T = 25°C  
A
C
I
Drain Current (continuous) at T = 100°C  
1.2  
8
A
D
C
I
()  
Drain Current (pulsed)  
A
DM  
P
(1)  
Total Dissipation at T = 25°C  
3
W
tot  
C
Derating Factor  
8
W/°C  
V/ns  
mJ  
°C  
°C  
(2)  
(3)  
Peak Diode Recovery voltage slope  
Single Pulse Avalanche Energy  
Storage Temperature  
6
dv/dt  
E
200  
AS  
T
stg  
-55 to 150  
T
Max. Operating Junction Temperature  
j
() Pulse width limited by safe operating area.  
(2) I  
2A, di/dt 100A/µs, V  
V  
DD  
, T T  
JMAX  
SD  
DD  
(BR)DSS  
= 30V  
j
(1)  
o
Related to Rthj -l  
(3) Starting T = 25 C, I = 2A, V  
j
D
November 2002  
1/8  
.

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