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STN3446 PDF预览

STN3446

更新时间: 2024-01-09 00:32:22
品牌 Logo 应用领域
司坦森 - STANSON /
页数 文件大小 规格书
6页 329K
描述
N Channel Enhancement Mode MOSFET

STN3446 数据手册

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STN3446  
N Channel Enhancement Mode MOSFET  
5.3A  
DESCRIPTION  
The STN3446 is the N-Channel enhancement mode power field effect transistor which  
is produced using high cell density, DMOS trench technology. This high density process  
is especially tailored to minimize on-state resistance. These devices are particularly  
suited for low voltage application, such as cellular phone and notebook computer  
power management and other battery powered circuits, and low in-line power loss are  
needed in a very small outline surface mount package.  
FEATURE  
PIN CONFIGURATION  
TSOP-6P  
20V/5.3A, RDS(ON)=48mΩ@VGS=4.5V  
20V/3.4A, RDS(ON)=65mΩ@VGS=2.5V  
20V/2.8A, RDS(ON)=90mΩ@VGS=1.8V  
Super high density cell design for extremely low  
RDS(ON)  
Exceptional an-resistance and maximum DC  
current capability  
TSOP-6P package design  
Y: Year Code  
W: Week Code  
STANSON TECHNOLOGY  
120 Bentley Square, Mountain View, Ca 94040 USA  
http://www.stansontech.com  
STN3446 2010. V1  

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