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STN4346 PDF预览

STN4346

更新时间: 2024-11-16 12:22:55
品牌 Logo 应用领域
司坦森 - STANSON 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
7页 352K
描述
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

STN4346 数据手册

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STN4346  
N Channel Enhancement Mode MOSFET  
6.8A  
DESCRIPTION  
STN4392 is the N-Channel logic enhancement mode power field effect transistor  
which is produced using high cell density, DMOS trench technology. This high density  
process is especially tailored to minimize on-state resistance. These devices are  
particularly suited for low voltage application such as power management and other  
battery powered circuits where high-side switching.  
FEATURE  
PIN CONFIGURATION  
SOP-8  
30V/6.8A, RDS(ON) = 26mΩ (Typ.)  
@VGS = 10V  
30V/6.0A, RDS(ON) = 34mΩ  
@VGS = 4.5V  
30V/5.6A, RDS(ON) = 40mΩ  
@VGS = 2.5V  
Super high density cell design for  
extremely low RDS(ON)  
Exceptional on-resistance and  
maximum DC current capability  
SOP-8 package design  
PART MARKING  
SOP-8  
STN4346  
Y A  
YYear Code  
AProcess Code  
STANSON TECHNOLOGY  
120 Bentley Square, Mountain View, Ca 94040 USA  
www.stansontech.com  
Copyright © 2007, Stanson Corp.  
STN4346 2010. V1  

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