Datasheet > STN4850

STN4850

更新时间： 2024-11-16 12:22:55

品牌	Logo	应用领域
司坦森 - STANSON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
6页	532K
描述
STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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STN4850 数据手册

STN4850

N Channel Enhancement Mode MOSFET

7.2A

DESCRIPTION

STN4850 is the N-Channel logic enhancement mode power field effect transistor

which is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance. These devices are

particularly suited for low voltage application such as power management and other

battery powered circuits where high-side switching.

FEATURE

PIN CONFIGURATION

SOP-8

�

60V/7.2A, R_DS(ON)= 27mΩ (Typ.)

@VGS = 10V

60V/6.8A, R_DS(ON)= 32mΩ

@VGS = 4.5V

Super high density cell design for

extremely low R_DS(ON)

Exceptional on-resistance and

maximum DC current capability

SOP-8 package design

PART MARKING

Y: Year Code

A: Process Code

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STN4850 2010. V1

12 3 4 5 6

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型号	品牌	获取价格	描述	数据表
STN4920	STANSON	获取价格	Dual N Channel Enhancement Mode MOSFET
STN4920S8RG	STANSON	获取价格	Dual N Channel Enhancement Mode MOSFET
STN4920S8TG	STANSON	获取价格	Dual N Channel Enhancement Mode MOSFET
STN4946	STANSON	获取价格	SOP-8P
STN4972	STANSON	获取价格	Dual N Channel Enhancement Mode MOSFET
STN4972S8RG	STANSON	获取价格	Dual N Channel Enhancement Mode MOSFET
STN4972S8TG	STANSON	获取价格	Dual N Channel Enhancement Mode MOSFET
STN4NE03	STMICROELECTRONICS	获取价格	N - CHANNEL 30V - 0.045ohm - 4A - SOT-223 STripFET POWER MOSFET
STN4NE03L	STMICROELECTRONICS	获取价格	N - CHANNEL 30V - 0.037ohm - 4A - SOT-223 STripFET POWER MOSFET
STN4NF03	STMICROELECTRONICS	获取价格	N-CHANNEL 30V - 0.039ohm - 6.5A SOT-223 STrip