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STN4920S8RG PDF预览

STN4920S8RG

更新时间: 2024-11-16 06:14:51
品牌 Logo 应用领域
司坦森 - STANSON /
页数 文件大小 规格书
7页 483K
描述
Dual N Channel Enhancement Mode MOSFET

STN4920S8RG 数据手册

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STN4920  
Dual N Channel Enhancement Mode MOSFET  
7.2A  
DESCRIPTION  
STN4920 is the Dual N-Channel logic enhancement mode power field effect  
transistors which are produced using high cell density DMOS trench technology. It is  
suitable for the power management applications in the portable or battery powered  
system.  
PIN CONFIGURATION  
FEATURE  
SOP-8  
z
z
z
30V/7.2A, RDS(ON) = 28mΩ@VGS = 10V  
30V/6.0A, RDS(ON) = 36mΩ@VGS = 4.5V  
Super high density cell design for  
extremely low RDS(ON)  
z
z
Exceptional on-resistance and maximum  
DC current capability  
SOP-8 package design  
PART MARKING  
SOP-8  
ORDERING INFORMATION  
Part Number  
Package  
SOP-8  
Part Marking  
STN4920  
STN4920S8RG  
STN4920S8TG  
SOP-8  
STN4920  
Process Code : A ~ Z ; a ~ z  
STN4920S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free  
STN4920S8TG S8 : SOP-8 ; T : Tube ; G : Pb – Free  
STANSON TECHNOLOGY  
120 Bentley Square, Mountain View, Ca 94040 USA  
www.stansontech.com  
Copyright © 2007, Stanson Corp.  
STN4920 2007. V1  

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