Datasheet > STN4438

STN4438

更新时间： 2024-11-17 17:15:39

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	878K
描述
种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时）:8.2A;Vgs(th)(V):±20;漏源导通电阻:40mΩ@10V

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STN4438 数据手册

UMW

UMW STN4438

Features

VDS (V) = 60V

32m

37m

(VGS = 10V)

(VGS = 4.5V)

RDS(ON)

Description

STN4438 is the N-Channel logic

enhancement mode power field effect

transistor which is produced using high

cell density, DMOS trench technology.

This high density process is especially

tailored to minimize on-state resistance.

These devices are particularly suited for

low voltage application such as power

management and other battery powered

circuits where high-side switching.

SOP-8

℃

Absoulte maximum ratings(Ta = 25 Unless otherwise noted )

Parameter Symbol

Typical

Unit

Drain-Source Voltage

Gate-Source Voltage

VDSS

VGSS

±20

TA=25 ℃

Continuous Drain Current

8.2

6.6

℃

(TJ=150

)

℃

TA=70

Pulsed Drain Current

IDM

Continuous Source Current (Diode Conduction)

3.0

TA=25℃

3.1

2.0

Power Dissipation

℃

TA=70

Operation Junction Temperature

Storgae Temperature Range

150

-55/150

TSTG

RθJA

℃

Thermal Resistance-Junction to Ambient

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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