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STN4438 PDF预览

STN4438

更新时间: 2024-09-14 17:15:39
品牌 Logo 应用领域
友台半导体 - UMW /
页数 文件大小 规格书
6页 878K
描述
种类:N-Channel;漏源电压(Vdss):60V;持续漏极电流(Id)(在25°C时):8.2A;Vgs(th)(V):±20;漏源导通电阻:40mΩ@10V

STN4438 数据手册

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R
UMW  
UMW STN4438  
Features  
VDS (V) = 60V  
l
l
l
32m  
37m  
(VGS = 10V)  
(VGS = 4.5V)  
RDS(ON)  
RDS(ON)  
Description  
STN4438 is the N-Channel logic  
enhancement mode power field effect  
transistor which is produced using high  
cell density, DMOS trench technology.  
This high density process is especially  
tailored to minimize on-state resistance.  
These devices are particularly suited for  
low voltage application such as power  
management and other battery powered  
circuits where high-side switching.  
SOP-8  
Absoulte maximum ratings(Ta = 25 Unless otherwise noted )  
Parameter Symbol  
Typical  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
VDSS  
60  
V
V
VGSS  
±20  
TA=25 ℃  
Continuous Drain Current  
ID  
8.2  
6.6  
A
(TJ=150  
)
TA=70  
Pulsed Drain Current  
IDM  
IS  
40  
A
Continuous Source Current (Diode Conduction)  
3.0  
A
TA=25℃  
3.1  
2.0  
Power Dissipation  
PD  
W
TA=70  
Operation Junction Temperature  
Storgae Temperature Range  
TJ  
150  
-55/150  
70  
TSTG  
RθJA  
/W  
Thermal Resistance-Junction to Ambient  
8
www.umw-ic.com  
1
UTD Semiconductor Co.,Limited  

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