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STN442D

更新时间： 2024-11-17 17:15:47

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STN442D 数据手册

STN442D

N Channel Enhancement Mode MOSFET

37.0A

DESCRIPTION

STN442D is used trench technology to provide excellent RDS(on) and gate charge.

Those devices are suitable for use as load switch or in PWM applications.

FEATURE

PIN CONFIGURATION (D-PAK)

TO-252

60V/20.0A, R_DS(ON)= 24mΩ (Typ.)

@VGS = 10V

60V/20.0A, R_DS(ON)= 31mΩ

@VGS = 4.5V

Super high density cell design for

extremely low R_DS(ON)

Exceptional on-resistance and

maximum DC current capability

TO-252 package design

PART MARKING

：

Year Code

：

A Process Code

：

B Wafer Code

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STN442D 2009. V1

12 3 4 5 6 7

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