Datasheet > STN4488L

STN4488L

更新时间： 2024-09-17 11:58:51

品牌	Logo	应用领域
司坦森 - STANSON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
7页	644K
描述
STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.

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STN4488L 数据手册

STN4488L

N Channel Enhancement Mode MOSFET

20.0A

DESCRIPTION

STN4488L is the NꢀChannel logic enhancement mode power field effect transistors

which are produced using high cell density DMOS trench technology. It is suitable for

the power management applications in the portable or battery powered system.

PIN CONFIGURATION

FEATURE

SOP-8

ꢀ

30V/20A, R_DS(ON)= 3.8mꢁ (Typ.)

@VGS = 10V

30V/18A, R_DS(ON)= 5.2mꢁ

@VGS = 4.5V

Super high density cell design for

extremely low R_DS(ON)

Exceptional onꢀresistance and maximum

DC current capability

SOPꢀ8 package design

PART MARKING

SOP-8

Y:Year Code

A: Week Code

M: Process Code

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STN4488L 2009. V1

12 3 4 5 6 7

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