Datasheet > STN6303

STN6303

更新时间： 2024-09-15 12:22:55

品牌	Logo	应用领域
司坦森 - STANSON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
6页	705K
描述
STN6303 is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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STN6303 数据手册

STN6303

Dual N Channel Enhancement Mode MOSFET

1.0A

DESCRIPTION

STN6303 is the dual NꢀChannel enhancement mode power field effect transistor which

is produced using high cell density, DMOS trench technology. This high density process

is especially tailored to minimize onꢀstate resistance and provide superior switching

performance. These devices are particularly suited for low voltage applications such as

notebook computer circuits where highꢀside switching, low inꢀline power loss and

resistance to transients are needed.

FEATURE

PIN CONFIGURATION

SOT-363 / SC70-6L

ꢀ

23V/0.5A, R_DS(ON)= 400mꢀohm@VGS =4.5V

23V/0.75A, R_DS(ON)=550mꢀohm@VGS =2.5V

Super high density cell design for extremely

low R_DS(ON)

D1 G2 S2

ꢀ

Exceptional low onꢀresistance and maximum

DC current capability

SOTꢀ363 / SC70ꢀ6L package design

53YW

Y: Year

W: Process Code

ORDERING INFORMATION

Part Number

Package

Part Marking

STN6303

SOTꢀ363 / SC70ꢀ6L

※ Process Code : A ~ Z(1~26) ; a ~ z(27~52)

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

STN6303 2008. V1

12 3 4 5 6

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