Datasheet > STN4826

STN4826

更新时间： 2024-09-14 17:15:39

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STN4826 数据手册

STN4826

Dual N Channel Enhancement Mode MOSFET

8.0A

DESCRIPTION

The STN4826 is the Dual N-Channel logic enhancement mode power field effect

transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance. These

devices are particularly suited for low voltage application , notebook computer power

management and other battery powered circuits where high-side switching .

FEATURE

PIN CONFIGURATION

SOP-8

60V/ 8.0A, R_DS(ON)= 30mΩ (Typ.)

@VGS = 10V

60V/6.0A, R_DS(ON)= 40mΩ

@VGS = 4.5V

Super high density cell design for

extremely low R_DS(ON)

Exceptional on-resistance and

maximum DC current capability

SOP-8 package design

MARKING

Y: Year Code

A: Porduce Code

B: Process Code

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STN4826 2013. V1

12 3 4 5 6

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型号	品牌	获取价格	描述	数据表
STN4828	STANSON	获取价格	SOP-8P
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STN4850	STANSON	获取价格	STN4850 is the N-Channel logic enhancement mode power field effect transistor which is pro
STN4920	STANSON	获取价格	Dual N Channel Enhancement Mode MOSFET
STN4920S8RG	STANSON	获取价格	Dual N Channel Enhancement Mode MOSFET
STN4920S8TG	STANSON	获取价格	Dual N Channel Enhancement Mode MOSFET
STN4946	STANSON	获取价格	SOP-8P
STN4972	STANSON	获取价格	Dual N Channel Enhancement Mode MOSFET
STN4972S8RG	STANSON	获取价格	Dual N Channel Enhancement Mode MOSFET
STN4972S8TG	STANSON	获取价格	Dual N Channel Enhancement Mode MOSFET