Datasheet > STN4392

STN4392

更新时间： 2024-02-08 03:40:27

品牌	Logo	应用领域
司坦森 - STANSON		晶体晶体管功率场效应晶体管
页数	文件大小	规格书
7页	383K
描述
STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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STN4392 数据手册

STN4392

N Channel Enhancement Mode MOSFET

13A

DESCRIPTION

STN4392 is the N-Channel logic enhancement mode power field effect transistor

which is produced using high cell density, DMOS trench technology. This high density

process is especially tailored to minimize on-state resistance. These devices are

particularly suited for low voltage application such as power management and other

battery powered circuits where high-side switching.

FEATURE

PIN CONFIGURATION

SOP-8

�

30V/13A, R_DS(ON)= 8mΩ (Typ.)

@VGS = 10V

30V/10A, R_DS(ON)= 12mΩ

@VGS = 4.5V

Super high density cell design for

extremely low R_DS(ON)

Exceptional on-resistance and

maximum DC current capability

SOP-8 package design

PART MARKING

SOP-8

STN4392

Y A

Y：Year Code A：Process Code

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STN4392 2009. V1

12 3 4 5 6 7

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