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STN4412S8TG PDF预览

STN4412S8TG

更新时间: 2024-11-16 06:14:51
品牌 Logo 应用领域
司坦森 - STANSON /
页数 文件大小 规格书
6页 484K
描述
N Channel Enhancement Mode MOSFET

STN4412S8TG 数据手册

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STN4412  
N Channel Enhancement Mode MOSFET  
6.8A  
DESCRIPTION  
STN4412 is the N-Channel logic enhancement mode power field effect transistor  
which is produced using high cell density, DMOS trench technology. This high density  
process is especially tailored to minimize on-state resistance. These devices are  
particularly suited for low voltage application such as power management and other  
battery powered circuits where high-side switching.  
FEATURE  
PIN CONFIGURATION  
SOP-8  
z
z
z
z
z
30V/6.8A, RDS(ON) = 28mΩ  
@VGS = 10V  
30V/5.6A, RDS(ON) = 36mΩ  
@VGS = 4.5V  
Super high density cell design for  
extremely low RDS(ON)  
Exceptional on-resistance and  
maximum DC current capability  
SOP-8 package design  
PART MARKING  
SOP-8  
STN4412  
S Y A  
ORDERING INFORMATION  
Part Number  
Package  
Part Marking  
STN4412S8RG  
SOP-8P  
STN4412  
STN4412S8TG  
SOP-8P  
STN4412  
Process Code : A ~ Z ; a ~ z  
STN4412S8RG S8 : SOP-8 ; R : Tape Reel ; G : Pb – Free  
STANSON TECHNOLOGY  
120 Bentley Square, Mountain View, Ca 94040 USA  
www.stansontech.com  
Copyright © 2007, Stanson Corp.  
STN4412 2007. V1  

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SOP-8P