Datasheet > STN3PF06_08

STN3PF06_08

更新时间： 2024-02-06 21:25:46

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	253K
描述
P-channel 60 V - 0.20 ヘ - 2.5 A - SOT-223 STripFET⑩ II Power MOSFET

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STN3PF06_08 数据手册

STN3PF06

P-channel 60 V - 0.20 Ω - 2.5 A - SOT-223

STripFET™ II Power MOSFET

Features

R_DS(on)

max

Type

V_DSS

I_D

STN3PF06

60 V

< 0.22 Ω

2.5 A

■ Extremely dv/dt capability

■ 100% avalanche tested

SOT-223

■ Application oriented characterization

Application

■ Switching applications

Description

Figure 1.

Internal schematic diagram

This Power MOSFET is the latest development of

STMicroelectronics unique “single feature size”

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a

remarkable manufacturing reproducibility.

Table 1.

Order code

STN3PF06

Device summary

Marking

Package

SOT-223

Packaging

N3PF06

Tape and reel

March 2008

Rev 4

1/12

www.st.com

12 3 4 5 6 7...12

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