Datasheet > STN4130

STN4130

更新时间： 2024-11-17 17:15:35

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STN4130 数据手册

STN4130

N Channel Enhancement Mode MOSFET

30.0A

DESCRIPTION

STN4130 is used trench technology to provide excellent RDS(on) and gate charge.

Those devices are ideal for boost converters and synchronous rectifiers for consumer,

telecom, industrial power supplies and LED backlighting.

FEATURE

PIN CONFIGURATION (D-PAK)

TO-252

60V/20.0A, R_DS(ON)= 40mΩ (Typ.)

@VGS = 10V

60V/20.0A, R_DS(ON)= 50mΩ

@VGS = 4.5V

Super high density cell design for

extremely low R_DS(ON)

Exceptional on-resistance and

maximum DC current capability

TO-252 package design

PART MARKING

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Y Year Code

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A Date Code

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B Wafer Code

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STN4130 2009. V1

12 3 4 5 6 7 8

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