Datasheet > STN4186D

STN4186D

更新时间： 2024-06-13 09:08:23

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STN4186D 数据手册

STN4186D

N Channel Enhancement Mode MOSFET

35.0A

DESCRIPTION

STN4186D is the N-Channel logic enhancement mode power field effect transistor

which is produced using high cell density, DMOS trench technology. The STN454D

has been designed specially to improve the overall efficiency of DC/DC converters

using either synchronous or conventional switching PWM controllers. It has been

optimized for low gate charge, low R_DS(ON)and fast switching speed.

FEATURE

PIN CONFIGURATION (D-PAK)

TO-252

40V/20.0A, R_DS(ON)= 13mΩ (Typ.)

@VGS = 10V

40V/15.0A, R_DS(ON)= 15mΩ

@VGS = 4.5V

Super high density cell design for

extremely low R_DS(ON)

Exceptional on-resistance and

maximum DC current capability

TO-252 package design

PART MARKING

Y: Year Code

A: Date Code

B: Wafer Code

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

STN4186D 2009. V1

12 3 4 5 6 7...10

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