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STN4189D PDF预览

STN4189D

更新时间: 2024-11-17 17:15:27
品牌 Logo 应用领域
司坦森 - STANSON /
页数 文件大小 规格书
9页 569K
描述
TO-251/TO-252

STN4189D 数据手册

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STP4189D  
P Channel Enhancement Mode MOSFET  
12.0A  
DESCRIPTION  
STP4189D is the PꢀChannel logic enhancement mode power field effect transistor  
which is produced using high cell density, DMOS trench technology. The STP413D has  
been designed specially to improve the overall efficiency of DC/DC converters using  
either synchronous or conventional switching PWM controllers. It has been optimized  
for low gate charge, low R  
and fast switching speed.  
DS(ON)  
FEATURE  
PIN CONFIGURATION (D-PAK)  
ꢀ40V/ꢀ12.0A, RDS(ON) = 18mꢁ (Typ.)  
@VGS = ꢀ10V  
ꢀ40V/ꢀ8.0A, RDS(ON) = 24mꢁ  
@VGS =ꢀ4.5V  
Super high density cell design for  
extremely low RDS(ON)  
Exceptional onꢀresistance and  
maximum DC current capability  
TOꢀ252,TOꢀ251 package design  
TO-252  
TO-251  
PART MARKING  
Y: Year Code  
A: Week Date  
Q: Process Code  
STANSON TECHNOLOGY  
120 Bentley Square, Mountain View, Ca 94040 USA  
www.stansontech.com  
Copyright © 2009, Stanson Corp.  
STP4189D 2009. V1  

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