STN3NE06

更新时间： 2024-01-08 10:33:17

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
8页	96K
描述
N - CHANNEL 60V - 0.08ohm- 3A - SOT-223 STripFET POWER MOSFET

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STN3NE06 数据手册

STN3NE06

N - CHANNEL 60V - 0.08

Ω

- 3A - SOT-223

STripFET POWER MOSFET

TYPE

V_DSS

R_DS(on)

I_D

STN3NE06

60 V

< 0.100 Ω

3 A

■

TYPICAL R_DS(on)= 0.08 Ω

EXCEPTIONAL dv/dt CAPABILITY

AVALANCHERUGGED TECHNOLOGY

100 % AVALANCHETESTED

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

This Power Mosfet is the latest development of

STMicroelectronics unique ”Single Feature

Size ” stip-based process. The resulting transis-

tor shows extremely high packing density for low

on-resistance, rugged avalanche characteristics

and less critical alignment steps therefore a re-

markable manufacturingreproducibility.

SOT-223

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

DC MOTOR CONTROL (DISK DRIVES,etc.)

DC-DC & DC-AC CONVERTERS

SYNCHRONOUS RECTIFICATION

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

Parameter

Value

Unit

Drain-source Voltage (V_GS= 0)

V_DGR

V_GS

I_D

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

± 20

Drain Current (continuous) at T_c= 25 C

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

I_D

1.8

I_DM(• )

P_tot

2.5

Total Dissipation at T_c= 25 C

Derating Factor

0.02

W/^oC

V/ns

^oC

dv/dt(¹) Peak Diode Recovery voltage slope

T_stg

T_j

Storage Temperature

-65 to 150

Max. Operating Junction Temperature

150

(•) Pulse width limited by safe operating area

(1) I_SD≤ 12 A, di/dt ≤ 200 A/µs, V_DD≤ V_(BR)DSS, T_j≤ T_JMAX

New RDS (on) spec. starting from JULY 98

1/9

August 1998

12 3 4 5 6 7 8

中文翻译

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STN3NE06 替代型号

型号	品牌	替代类型	描述	数据表
STN2N06	STMICROELECTRONICS	功能相似	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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