Datasheet > STN3PF06

STN3PF06

更新时间： 2024-02-11 02:44:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
6页	120K
描述
P-CHANNEL 60V - 0.18ohm - 3A SOT-223 STripFET⑩ II POWER MOSFET

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STN3PF06 数据手册

STN3PF06

P-CHANNEL 60V - 0.18Ω - 3A SOT-223

STripFET™ II POWER MOSFET

PRELIMINARY DATA

TYPE

DSS

DS(on)

STN3PF06

60V

<0.20Ω

2.5A

■

TYPICAL R (on) = 0.18Ω

EXCEPTIONAL dv/dt CAPABILITY

AVALANCHE RUGGED TECHNOLOGY

100% AVALANCHE TESTED

LOW THRESHOLD DRIVE

SOT-223

DESCRIPTION

This Power Mosfet is the latest development of STMi-

croelectronics unique “Single Feature Size™” strip-

based process. The resulting transistor shows ex-

tremely high packing density for low on-resistance,

rugged avalance characteristics and less critical

alignment steps therefore a remarkable manufactur-

ing reproducibility.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

DC-DC & DC-AC CONVERTERS

■

DC MOTOR CONTROL (DISK DRIVES, etc.)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

Drain-source Voltage (V = 0)

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

±20

Drain Current (continuos) at T = 25°C

2.5

Drain Current (continuos) at T = 100°C

1.5

(●)

Drain Current (pulsed)

TOT

Total Dissipation at T = 25°C

2.5

Derating Factor

0.02

W/°C

V/ns

°C

dv/dt(1)

Peak Diode Recovery voltage slope

Storage Temperature

stg

–65 to 175

150

Max. Operating Junction Temperature

(●) Pulse width limited by safe operating area

Note: For the P-CHANNEL MOSFET actual poloarity of Voltages and

current has to be reversed

(1)I ≤3A, di/dt ≤200A/µs, V ≤ V

, T ≤ T

j JMAX.

(BR)DSS

January 2001

1/6

12 3 4 5 6

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STN3PF06 替代型号

型号	品牌	替代类型	描述	数据表
STN3P6F6	STMICROELECTRONICS	功能相似	P-channel 60 V, 0.13 Î© typ., 3 A STripFETâ¢
NTF2955T1G	ONSEMI	功能相似	â60 V, â2.6 A, Single PâChannel SOTâ2
NVF2955T1G	ONSEMI	功能相似	Power MOSFET â60 V, â2.6 A, Single PâCh

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