Datasheet > STN3P6F6

STN3P6F6

更新时间： 2024-02-19 04:58:13

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	1099K
描述
P-channel 60 V, 0.13 Î© typ., 3 A STripFETâ¢ VI DeepGATEâ¢ Power MOSFET in a SOT-223 package

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STN3P6F6 数据手册

STN3P6F6

P-channel 60 V, 0.13 Ω typ., 3 A STripFET™ VI DeepGATE™

Power MOSFET in a SOT-223 package

Datasheet - production data

Features

Order code

V_DSS

R_DS(on)max

I_D

STN3P6F6

60 V

0.16 Ω @ 10 V

3 A

• R_DS(on)* Qg industry benchmark

• Extremely low on-resistance R_DS(on)

• High avalanche ruggedness

SOT-223

• Low gate drive power losses

Applications

• Switching applications

Figure 1. Internal schematic diagram

Description

This device is a P-channel Power MOSFET

D (2, 4)

developed using the 6^thgeneration of STripFET™

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFET exhibits

the lowest R_DS(on)in all packages.

G (1)

S (3)

Table 1. Device summary

Order code

Marking

STN3P6F6

Package

Packaging

STN3P6F6

SOT-223

Tape and reel

Note:

For the P-channel Power MOSFET the actual polarity of the voltages and the current must

be reversed.

March 2013

DocID023758 Rev 4

1/12

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...12

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STN3P6F6 替代型号

型号	品牌	替代类型	描述	数据表
STN3PF06	STMICROELECTRONICS	功能相似	P-CHANNEL 60V - 0.18ohm - 3A SOT-223 STripFET

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