Datasheet > STN3P10F6

STN3P10F6

更新时间： 2023-12-20 18:44:53

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	608K
描述
P沟道100 V、0.136 Ohm典型值、3 A STripFET F6功率MOSFET，SOT-223封装

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STN3P10F6 数据手册

STN3P10F6

P-channel -100 V, 0.136 Ω typ., -3 A STripFET™ F6

Power MOSFET in an SOT-223 package

Datasheet - preliminary data

Features

Order code

V_DS

R_DS(on)max.

I_D

STN3P10F6

-100 V

0.180 Ω

-3 A



Very low on-resistance

Very low gate charge

High avalanche ruggedness

Low gate drive power loss

Applications

Figure 1: Internal schematic diagram



Switching applications

Description

D(2, 4)

This device is a P-channel Power MOSFET

developed using the STripFET™ F6 technology,

with a new trench gate structure. The resulting

Power MOSFET exhibits very low R_DS(on)in all

packages.

G(1)

S(3)

Int_schem_P_ch_nTnZ_SOT_223

Table 1: Device summary

Marking Package

3P10F6 SOT-223

Order code

Packing

STN3P10F6

Tape and reel

February 2018

DocID030857 Rev 2

1/13

www.st.com

This is preliminary information on a new product now in development

or undergoing evaluation. Details are subject to change without notice.

12 3 4 5 6 7...13

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