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STN3NE06L PDF预览

STN3NE06L

更新时间: 2024-02-05 01:41:33
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
5页 67K
描述
N - CHANNEL 60V - 0.10 ohm - 3A - SOT-223 STripFETO POWER MOSFET

STN3NE06L 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:SOT-223包装说明:SOT-223, 4 PIN
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.85
Is Samacsys:N雪崩能效等级(Eas):20 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):3 A
最大漏极电流 (ID):3 A最大漏源导通电阻:0.12 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G4
JESD-609代码:e0湿度敏感等级:1
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2.5 W
最大脉冲漏极电流 (IDM):12 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STN3NE06L 数据手册

 浏览型号STN3NE06L的Datasheet PDF文件第2页浏览型号STN3NE06L的Datasheet PDF文件第3页浏览型号STN3NE06L的Datasheet PDF文件第4页浏览型号STN3NE06L的Datasheet PDF文件第5页 
STN3NE06L  
®
N - CHANNEL 60V - 0.10 - 3A - SOT-223  
STripFET POWER MOSFET  
PRELIMINARY DATA  
TYPE  
STN3NE06L  
VDSS  
RDS(on)  
ID  
60 V  
< 0.120 Ω  
3 A  
TYPICAL RDS(on) = 0.10 Ω  
EXCEPTIONAL dv/dt CAPABILITY  
AVALANCHE RUGGED TECHNOLOGY  
100 % AVALANCHE TESTED  
APPLICATION ORIENTED  
2
3
CHARACTERIZATION  
2
1
DESCRIPTION  
This Power Mosfet is the latest development of  
STMicroelectronics unique "Single Feature  
Size " stip-based process. The resulting transis-  
tor shows extremely high packing density for low  
on-resistance, rugged avalanche characteristics  
and less critical alignment steps therefore a re-  
markable manufacturing reproducibility.  
SOT-223  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
DC MOTOR CONTROL (DISK DRIVES,etc.)  
DC-DC & DC-AC CONVERTERS  
SYNCHRONOUS RECTIFICATION  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
60  
V
V
VDGR  
VGS  
ID  
60  
± 20  
V
o
Drain Current (continuous) at Tc = 25 C  
3
1.8  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
A
IDM()  
Ptot  
Drain Current (pulsed)  
12  
A
o
Total Dissipation at Tc = 25 C  
2.5  
W
Derating Factor  
0.02  
6
W/oC  
V/ns  
oC  
oC  
dv/dt(1) Peak Diode Recovery voltage slope  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
Max. Operating Junction Temperature  
150  
() Pulse width limited by safe operating area  
(1) ISD 12 A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX  
New RDS (on) spec. starting from JULY 98  
1/5  
August 1998  

STN3NE06L 替代型号

型号 品牌 替代类型 描述 数据表
STE70NM50 STMICROELECTRONICS

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