Datasheet > STN3NF06L_08

STN3NF06L_08

更新时间： 2024-02-13 22:23:02

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	252K
描述
N-channel 60 V, 0.07 ヘ, 4 A, SOT-223 STripFET⑩ II Power MOSFET

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STN3NF06L_08 数据手册

STN3NF06L

N-channel 60 V, 0.07 Ω, 4 A, SOT-223

STripFET™ II Power MOSFET

Features

V_DSS

(@Tjmax)

R_DS(on)

max

Type

I_D

4 A

STN3NF06L

60 V

< 0.1 Ω

■ Exceptional dv/dt capability

■ Avalanche rugged technology

■ 100% avalanche tested

■ Low threshold drive

SOT-223

Application

■ Switching applications

Figure 1.

Internal schematic diagram

Description

This Power MOSFET is the latest development of

STMicroelectronics unique “single feature size”

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a

remarkable manufacturing reproducibility.

Table 1.

Order code

STN3NF06L

Device summary

Marking

Package

SOT-223

Packaging

3NF06L

Tape and reel

June 2008

Rev 8

1/12

www.st.com

12 3 4 5 6 7...12

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