Datasheet > STN3456

STN3456

更新时间： 2024-05-23 22:23:25

品牌	Logo	应用领域
司坦森 - STANSON		/
页数	文件大小	规格书
6页	398K
描述
TSOP-6P

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数据手册

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STN3456 数据手册

STN3456

N Channel Enhancement Mode MOSFET

6.0A

DESCRIPTION

The STN3456 is the N-Channel enhancement mode power field effect transistor which

is produced using high cell density, DMOS trench technology. This high density process

is especially tailored to minimize on-state resistance. These devices are particularly

suited for low voltage application, such as cellular phone and notebook computer

power management and other battery powered circuits, and low in-line power loss are

needed in a very small outline surface mount package.

FEATURE

PIN CONFIGURATION

TSOP-6P

◆

30V/6.0A, RDS(ON)=40mΩ@VGS=10V

30V/5.0A, RDS(ON)=50mΩ@VGS=4.5V

◆

Super high density cell design for extremely low

RDS(ON)

Exceptional an-resistance and maximum DC

current capability

TSOP-6P package design

Y: Year Code

W: Week Code

ORDERING INFORMATION

Part Number

Package

Part Marking

STN3456ST6RG

TSOP-6

56YW

※ Week Code Code : A ~ Z ; a ~ z

※ STN3456ST6RG

ST6 : TSOP-6; R: Tape Reel ; G: Pb – Free

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

STN3456 2008. V1

12 3 4 5 6

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