Datasheet > STN3904SF

STN3904SF

更新时间： 2024-01-14 20:51:42

品牌	Logo	应用领域
可天士 - KODENSHI		晶体晶体管
页数	文件大小	规格书
4页	271K
描述
NPN Silicon Transistor

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中文翻译

获取价格

数据手册

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STN3904SF 数据手册

STN3904SF

NPN Silicon Transistor

Descriptions

PIN Connection

• General small signal amplifier

• Switching application

Features

• Low collector saturation voltage

• Collector output capacitance

• Complementary pair with STN3906SF

SOT-23F

Ordering Information

Type NO.

Marking

KA □

Package Code

STN3904SF

SOT-23F

①

②

① Device Code ② Year&Week Code

Absolute maximum ratings

Characteristic

(Ta=25°C)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-Base voltage

Collector current

100

°C

Collector dissipation

P_C

350

Junction temperature

T_j

150

Storage temperature

T_stg

-55~150

°C

* : Package mounted on 99.5% Alumina 10×8×0.6

Electrical Characteristics

(Ta=25°C)

Characteristic

Collector-Base breakdown voltage

Collector-Emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

Symbol

Test Condition

Min. Typ. Max. Unit

BV_CBO

BV_CEO

BV_EBO

I_CBO

I_C=10μA, I_E=0

I_C=1mA, I_B=0

I_E=10μA, I_C=0

V_CB=60V, I_E=0

0.1

300

0.4

μA

DC current gain

h_FE

V_CE=1V, I_C=10mA

I_C=50mA, I_B=5mA

V_CE=20V, I_C=10mA

V_CE=5V, I_E=0, f=1MHz

100

Collector-Emitter saturation voltage

Transition frequency

V_CE(sat)

f_T

300

MHz

Collector output capacitance

C_ob

KSD-T5C018-000

12 3 4

中文翻译

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