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STN3N45K3 PDF预览

STN3N45K3

更新时间: 2024-02-21 10:28:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
12页 487K
描述
N-channel 450 V, 3.2 Ω, 1.8 A, TO-92, SOT-223, IPAK SuperMESH3™ Power MOSFET

STN3N45K3 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:9 weeks风险等级:1.69
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:450 V最大漏极电流 (Abs) (ID):0.6 A
最大漏极电流 (ID):0.6 A最大漏源导通电阻:3.8 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):2 W
最大脉冲漏极电流 (IDM):2.4 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STN3N45K3 数据手册

 浏览型号STN3N45K3的Datasheet PDF文件第2页浏览型号STN3N45K3的Datasheet PDF文件第3页浏览型号STN3N45K3的Datasheet PDF文件第4页浏览型号STN3N45K3的Datasheet PDF文件第5页浏览型号STN3N45K3的Datasheet PDF文件第6页浏览型号STN3N45K3的Datasheet PDF文件第7页 
STN3N45K3  
STQ3N45K3-AP, STU3N45K3  
N-channel 450 V, 3.2 , 1.8 A, TO-92, SOT-223, IPAK  
SuperMESH3™ Power MOSFET  
Preliminary data  
Features  
RDS(on)  
max  
Type  
VDSS  
ID  
Pw  
3
STN3N45K3  
450 V  
< 3.8 0.6 A 2 W  
< 3.8 0.6 A 2.5 W  
< 3.8 1.8 A 27 W  
2
1
STQ3N45K3-AP 450 V  
STU3N45K3 450 V  
TO-92  
IPAK  
2
100% avalanche tested  
3
2
Extremely high dv/dt capability  
Gate charge minimized  
1
SOT-223  
Very low intrinsic capacitance  
Improved diode reverse recovery  
characteristics  
Zener-protected  
Figure 1.  
Internal schematic diagram  
D(2)  
Application  
Switching applications  
Description  
G(1)  
The new SuperMESH3™ series is obtained  
through the combination of a further fine tuning of  
ST's well established strip-based PowerMESH™  
layout with a new optimization of the vertical  
structure. In addition to reducing on-resistance  
significantly versus previous generation, special  
attention has been taken to ensure a very good  
dv/dt capability and higher margin in breakdown  
voltage for the most demanding application.  
S(3)  
AM01476v1  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STN3N45K3  
STQ3N45K3-AP  
STU3N45K3  
3N45K3  
3N45K3  
3N45K3  
SOT-223  
TO-92  
IPAK  
Tube  
Ammopak  
Tube  
April 2010  
Doc ID 17206 Rev 2  
1/12  
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to  
change without notice.  
www.st.com  
12  

STN3N45K3 替代型号

型号 品牌 替代类型 描述 数据表
STN4NF20L STMICROELECTRONICS

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