Datasheet > STH10N80K5-2AG

STH10N80K5-2AG

更新时间： 2024-11-20 14:57:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	419K
描述
Automotive-grade N-channel 800 V, 0.60 Ohm typ., 8 A MDmesh K5 Power MOSFET in an H2PAK-2 package

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STH10N80K5-2AG 数据手册

STH10N80K5-2AG

Datasheet

Automotive-grade N-channel 800 V, 0.60 Ω typ., 8 A MDmesh K5

Power MOSFET in an H²PAK-2 package

Features

TAB

DS(on)

max.

Order code

STH10N80K5-2AG

800 V

0.68 Ω

8 A

•

AEC-Q101 qualified

Industry’s lowest R_DS(on)x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

H PAK-2

D(TAB)

100% avalanche tested

Applications

•

Switching applications

G(1)

Description

S(2, 3)

This very high voltage N-channel Power MOSFET is designed using MDmesh K5

technology based on an innovative proprietary vertical structure. The result is a

dramatic reduction in on-resistance and ultra-low gate charge for applications

requiring superior power density and high efficiency.

DTG1S23NZ

Product status link

STH10N80K5-2AG

Product summary

Order code

Marking

STH10N80K5-2AG

10N80K5

Package

Packing

H²PAK-2

Tape and reel

DS13355 - Rev 1 - May 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...14

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