生命周期: | Obsolete | 包装说明: | ROHS COMPLIANT, H2PAK-3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.84 |
雪崩能效等级(Eas): | 1000 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (Abs) (ID): | 120 A | 最大漏极电流 (ID): | 120 A |
最大漏源导通电阻: | 0.0085 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 300 W |
最大脉冲漏极电流 (IDM): | 480 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STH140N6F7-2 | STMICROELECTRONICS |
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High avalanche ruggedness |
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STH140N6F7-6 | STMICROELECTRONICS |
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High avalanche ruggedness |
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STH140N8F7-2 | STMICROELECTRONICS |
获取价格 |
N沟道80 V、3.3 mOhm典型值、90 A STripFET F7功率MOSFET, |
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STH145N8F7-2AG | STMICROELECTRONICS |
获取价格 |
汽车级N沟道80 V、3.3 mOhm典型值、90 A STripFET F7功率MOSF |
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STH14N50 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 14.1A I(D) | TO-218 |
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STH14N50FI | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8.8A I(D) | TO-218VAR |
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STH150N10F7-2 | STMICROELECTRONICS |
获取价格 |
N沟道100 V、0.0038 Ohm典型值、90 A STripFET F7功率MOSF |
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STH155N75F4-2 | STMICROELECTRONICS |
获取价格 |
160A, 75V, 0.0052ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, H2PAK-3 |
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STH15N50 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 15A I(D) | TO-218 |
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STH15N50FI | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 9.3A I(D) | TO-218VAR |
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